| PART |
Description |
Maker |
| 2SD965 |
Satisfactory operation performances at high efficiency with the lowvoltage power supply.
|
TY Semiconductor Co., Ltd
|
| 74VCXH162245 6461 |
LOWVOLTAGE CMOS 16-BIT BUS TRANSCEIVER (3-STATE)
From old datasheet system
|
STMicro
|
| 74VCXH16245 6452 |
LOWVOLTAGE CMOS 16-BIT BUS TRANSCEIVER (3-STATE)
From old datasheet system
|
STMicro
|
| 74LCX16245 |
LOWVOLTAGE CMOS 16-BIT BUS TRANSCEIVER (3-STATE)WITH 5V TOLERANT INPUTS AND OUTPUTS
|
STMicro
|
| AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| 74LCX245 4965 |
LOWVOLTAGE CMOS OCTAL BUS TRANSCEIVER (3-STATE)WITH 5V TOLERANT INPUTS AND OUTPUTS
From old datasheet system
|
STMicro
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
| CD4049UBC CD4050B CD4050BC CD4049UBC02 CD4050BCN C |
LOGIC GATE|HEX INVERTER|CMOS|SOP|16PIN|PLASTIC
HEX INVERTING BUFFER HEX NON-INVERTING BUFFER
Hex Inverting Buffer •
Hex Inverting Buffer ?Hex Non-Inverting Buffer
|
FAIRCHILD[Fairchild Semiconductor]
|
| K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
